Kondo-Lab.

Research Center for Advanced Science and Technology / Department of Materials Engineering in The University of Tokyo

 We are studying photonics materials and devices such as laser beam wavelength conversion devices using compound semiconductors GaAs and solar cells using perovskite type semiconductors.

GaAs_and_perovskite

Crystal structures of compound semiconductors GaAs and perovskite-type semiconductors (typical example: CH3NH3PbI3), which are the main research subjects.

We are growing compound semiconductors GaAs and perovskite-type semiconductor thin films by using molecular beam epitaxy (MBE), which is a thin film growth technology that can produce high-quality semiconductor crystals. It is possible to grow thin films with a composition and purity that are difficult to produce by other methods, such as a superlattice structure whose composition is controlled on a nanoscale.

Perovskite-type solar cell materials

Growth methods for halogenated perovskite single crystals and thin films

 We are conducting research from the fabrication of halogenated perovskite single crystal thin films, which are expected to be used in light emitting / receiving devices.

Perovskite_crystal_and_film

Single crystals and thin films of hybrid perovskite type semiconductors synthesized and grown in our laboratory (photo).

Spontaneous mixed crystallization and photoinduced spinodal decomposition

 It was discovered that iodine-based CH3NH3PbI3 and bromine-based CH3NH3PbBr3 spontaneously co-crystallize when the halogenated lead perovskite polycrystalline thin film of iodine-based CH3NH3PbI3 and bromine-based CH3NH3PbBr3 is sequentially grown. We found that when the mixed crystal was irradiated with light, photo-induced spinodal decomposition occurred and separated into two types of compositions.

 

Spinodal_phase_separation

Spontaneous mixed crystallization and photoinduced spinodal decomposition. (Left) X-ray diffraction pattern and each thin film structure. (Right) Temperature dependence of photoinduced spinodal decomposition.

Double heterolayer film fabrication

We are conducting research to realize a tabular heteromembrane that is expected to be applied to light emitting devices by using polycrystalline thin films of iodine-based CH3NH3PbI3 and chlorine-based CH3NH3PbCl3, which are unlikely to be mixed with each other.

Perovskite_heterostructure

Single crystalline CH3NH3Pb(Br0.93I0.07)3 heteroepitaxial thin film.

Fabrication of heteroepitaxial structure of perovskite semiconductors

We are conducting research to realize a halogenated perovskite single crystal thin film, which is expected to be used in light emitting / receiving devices.

Fabrication_of_hetero-structure

CH3NH3PbCl3/CH3NH3PbI3/CH3NH3PbCl3 double heteroepitaxial film

Sublattice-exchanged GaAs superlattice growth and wavelength conversion devices

Researches of sublattice exchange epitaxy crystal growth

 We are researching high-performance wavelength conversion devices that are expected to be applied to large-capacity optical communications and spectroscopy.

GaAs_sublattice_exchange_

Crystal structure in a GaAs thin film grown by sublattice exchange epitaxy that controls the orientation of compound semiconductor crystals at the atomic level

Waveguide type pseudo-phase matching wavelength conversion element

We are engaged in research on compound semiconductor crystal growth technology for wavelength conversion devices. Since compound semiconductors have extremely large nonlinear optical constants, they are excellent as wavelength conversion materials. We have independently developed and researched sub-lattice exchange epitaxy that controls the orientation of compound semiconductor crystals at the atomic level.


GaAs_wavelength_converter

Structure of wavelength conversion device using periodic polarization inversion structure.